Exceptional speed, high reliability,low energy consumption
An evolution in performance
Increased bandwidth, up to 3200Mbps
Easily processing massive workloads with enhanced speed, the DDR4 transfers more data faster than ever before,
offering 4 bank groups (total 16 banks) to reduce interleaving delays, plus 3200Mbps bandwidth.
Less energy, greater efficiency
Advanced process technology, Reduce core and on/off power
Samsung’s industry-first 1x nm process technology enables DDR4 to consume less power while boosting performance, reducing TCO.
The 1.2V low operating voltage and Pseudo Open Drain (POD) interface enables lower power consumption, using 25% less energy.
Improved reliability
Safe CRC transmission, Parity bit to prevent errors
System reliability is ever more critical as data centers process ever more traffic. Advanced features of the Samsung DDR4 ensure
superior data transmission, including Write CRC to help recognize multibit failures and parity checks for CMD/ADD to prevent system malfunctions.
Exceptional speed, high reliability, low energy consumption
• High-performing memory empowers faster, powerful solutions. Samsung DDR4 delivers top speed with better bandwidth and reliability using less energy.
Quality and Reliability
• Robust operation under standard conditions.
• Extended temperature range.
• Rigorous testing standards.
Lifespan and Sustainability
• Durable with a long operational lifespan
• Meets energy-saving standards for sustainability
| Part Number | K4ABG165WA-MCWE |
| Density | 32 Gb |
| Organization | 2G x 16 |
| Speed | 3200 Mbps |
| Voltage | 1.2 V |
| Temperature | 0 ~ 85 °C |
| Package | 96 FBGA |
| Product Status | Mass Production |
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